Comparative Study of High Temperature Anti-oxidation Property of Sputtering Deposited Stoichiometric and Si-rich SiC Films
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Published:2021-11-17
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ISSN:1674-1056
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Container-title:Chinese Physics B
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language:
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Short-container-title:Chinese Phys. B
Author:
WANG Hang-hang,LU Wen-qi,ZHANG Jiao,XU Jun
Abstract
Abstract
Stoichiometric and silicon-rich (Si-rich) SiC films were deposited by Microwave Electron Cyclotron Resonance (MW-ECR) plasma enhanced RF magnetron sputtering method. As-deposited films were oxidized at 800, 900 and 1000 ℃ in air for 60 min. The chemical composition and structure of the films were analyzed by X-ray Photoelectron Spectroscopy (XPS), Raman spectroscopy and Fourier Transform Infrared spectroscopy (FT-IR). The surface morphology of the films before and after high temperature oxidation was measured by atomic force microscopy. The mechanical property of the films was measured by a Nano-indenter. The anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC film. The oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth direction. The large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.
Subject
General Physics and Astronomy