Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/9/097307/pdf
Reference13 articles.
1. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
2. Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
3. Extraction of Schottky diode parameters from forward current‐voltage characteristics
4. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
5. Surface Effects on Metal‐Silicon Contacts
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