Atomic-level Quantitative Analysis of Electronic Functional Materials in Aberration-corrected STEM

Abstract

Abstract The stable sub-angstrom resolution of the aberration-corrected scanning transmission electron microscope (AC-STEM) makes it an advanced and practical characterization technique for all materials. Owing to the prosperous advancement in computational technology, specialized software and programs have emerged as potent facilitators across the entirety of electron microscopy characterization process. Utilizing advanced image processing algorithms promotes the rectification of image distortions, concurrently elevating the overall image quality to superior standards. Extracting high-resolution, pixel-level discrete information and converting it into atomic-scale, followed by performing statistical calculations on the physical matters of interest through quantitative analysis, represents an effective strategy to maximize the value of electron microscope images. The efficacious utilization of quantitative analysis of electron microscope images has become a progressively prominent consideration for materials scientists and electron microscopy researchers. This article offers a concise overview of the pivotal procedures in quantitative analysis and summarizes the computational methodologies involved from three perspectives: contrast, lattice and strain, as well as atomic displacements and polarization. It further elaborates on practical applications of these methods in electronic functional materials, notably in piezoelectrics/ferroelectrics and thermoelectrics. It emphasizes the indispensable role of quantitative analysis in fundamental theoretical research, elucidating the structure-property correlations in high-performance systems, and guiding synthesis strategies.