A unified drain current 1/ f noise model for GaN-based high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/2/020701/pdf
Reference14 articles.
1. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
2. Effects of polarization on intersubband transitions of AlxGa1−xN/GaN multi-quantum wells
3. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
4. Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT;AIP Advances;2024-03-01
2. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model;Acta Physica Sinica;2015
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