Author:
Li Yi,Zhu Youhua,Wang Meiyu,Deng Honghai,Yin Haihong
Abstract
The optical properties of the type-II lineup In
x
Al1−x
N–Al0.59Ga0.41N/Al0.74Ga0.26N quantum well (QW) structures with different In contents are investigated by using the six-by-six K–P method. The type-II lineup structures exhibit the larger product of Fermi–Dirac distribution functions of electron
f
c
n
and hole
(
1
−
f
v
U
m
)
and the approximately equal transverse electric (TE) polarization optical matrix elements (
|
M
x
|
2
)
for the c1–v1 transition. As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%–53.84% as compared to that of the conventional AlGaN QW structure. In addition, the type-II QW structure with
x
∼
0.17
has the largest TE mode peak intensity in the investigated In-content range of 0.13–0.23. It can be attributed to the combined effect of
|
M
x
|
2
and
f
c
n
(
1
−
f
v
U
m
)
for the c1–v1, c1–v2, and c1–v3 transitions.
Subject
General Physics and Astronomy
Cited by
3 articles.
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