Effects of growth conditions on optical quality and surface morphology of InGaAsBi
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/4/048101/pdf
Reference25 articles.
1. Characteristics of Semiconductor Alloy GaAs1-xBix
2. Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys
3. Composition dependence of photoluminescence of GaAs1−xBix alloys
4. Giant Spin-Orbit Bowing inGaAs1−xBix
5. Calculated spin-orbit splitting of all diamondlike and zinc-blende semiconductors: Effects ofp1∕2local orbitals and chemical trends
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Band gap energy of the As-rich InxGa1-xBiyAs1-y depending on composition;Infrared Physics & Technology;2021-06
2. InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy;Materials Research Express;2021-02-01
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