Author:
Ni Lijun,Wang Wenqiang,Jin Lichuan,Ye Jiandong,Gong Hehe,Zhan Xiang,Chen Zhendong,Zhang Longlong,Dai Xingze,Li Yao,Zhang Rong,Yang Yi,Zhang Huaiwu,Liu Ronghua,Chen Lina,Xu Yongbing
Abstract
We report the temperature dependence of the spin pumping effect for Y3Fe5O12 (YIG, 0.9 μm)/NiO (t
NiO)/W (6 nm) (t
NiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal I
c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I
c with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (t
NiO ≈ 1–2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I
c of YIG/NiO/W exhibits a maximum near the T
N of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.
Subject
General Physics and Astronomy