Temperature-dependent dielectric properties of Au/Si 3 N 4 /n-Si (metal—insulator—semiconductor) structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/117310/pdf
Reference53 articles.
1. Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode
2. A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure
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