Author:
Gao 高 Zhiting 志廷,Guo 郭 Minghua 明华,Lian 连 Zichen 梓臣,Li 李 Yaoxin 耀鑫,Bai 白 Yunhe 云鹤,Feng 冯 Xiao 硝,He 何 Ke 珂,Wang 王 Yayu 亚愚,Liu 刘 Chang 畅,Zhang 张 Jinsong 金松
Abstract
We have developed a low-damage photolithography method for magnetically doped (Bi,Sb)2Te3 quantum anomalous Hall (QAH) thin films incorporating an additional resist layer of poly(methyl methacrylate) (PMMA). By performing control experiments on the transport properties of five devices at varied gate voltages (V
gs), we revealed that the modified photolithography method enables fabricating QAH devices with the transport and magnetic properties unaffected by fabrication process. Our experiment represents a step towards the production of novel micro-structured electronic devices based on the dissipationless QAH chiral edge states.
Subject
General Physics and Astronomy