Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference13 articles.
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1. Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations;Applied Physics Letters;2022-05-30
2. Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes;Superlattices and Microstructures;2020-09
3. Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN;Acta Physica Sinica;2013
4. The preparation and performance analysis of GaN-based high-voltage DC light emitting diode;Acta Physica Sinica;2012
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