Thermal stability and data retention of resistive random access memory with HfO x /ZnO double layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/8/087305/pdf
Reference39 articles.
1. Resistance random access memory
2. Emerging memories: resistive switching mechanisms and current status
3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
4. Metal oxide memories based on thermochemical and valence change mechanisms
5. HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
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1. Electric modulation of anisotropic magnetoresistance in Pt/HfO2–x /NiO y /Ni heterojunctions;Chinese Physics B;2023-07-01
2. Reproducible Non-Volatile Multi-State Storage and Emulation of Synaptic Plasticity Based on a Copper-Nanoparticle-Embedded HfOx/ZnO Bilayer with Ultralow-Switching Current and Ideal Data Retention;Nanomaterials;2022-10-26
3. Implementation of synaptic learning rules by TaO x memristors embedded with silver nanoparticles*;Chinese Physics B;2021-04-01
4. Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays;Advanced Intelligent Systems;2020-11-04
5. Enhanced reliability through regulation of electrode resistance in indium tin oxide/HfO /TiN resistive memories;Materials Science in Semiconductor Processing;2020-09
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