Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface

Abstract

The achievement of universal quantum computing critically relies on scalability. However, ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy (E VS) across quantum dot arrays, which impede the initialization of qubit systems comprising multiple spins and give rise to spin–valley entanglement resulting in the loss of spin information. These E VS fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells. In this study, employing atomistic pseudopotential calculations, we unveil a significant spectrum of E VS even in the absence of such concentration fluctuations. This spectrum represents the lower limit of the wide range of E VS observed in numerous Si/SiGe quantum devices. By constructing simplified interface atomic step models, we analytically demonstrate that the lower bound of the E VS spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers — an inherent characteristic that has been previously overlooked. Additionally, we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in E VS by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface. Our findings provide valuable insights into the critical role of in-plane randomness in determining E VS in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.