A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
1. 1000-V, 30-A 4H-SiC BJTs with high current gain
2. 4 kV 4H-SiC epitaxial emitter bipolar junction transistors
3. Temperature dependence of the current gain in power 4H-SiC NPN BJTs
4. Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors
5. Geometrical effects in high current gain 1100-V 4H-SiC BJTs
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1. Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling;Journal of Crystal Growth;2020-02
2. Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability;Semiconductor Science and Technology;2019-02-28
3. Analytical PSpice model for SiC MOSFET based high power modules;Microelectronics Journal;2016-07
4. Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules;IEEE Transactions on Power Electronics;2016-06
5. Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes;Materials Science Forum;2015-06
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