High holding voltage SCR for robust electrostatic discharge protection
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/7/077304/pdf
Reference20 articles.
1. Native-NMOS-Triggered SCR With Faster Turn-On Speed for Effective ESD Protection in a 0.13-$rm murm m$CMOS Process
2. A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-μm 5-V CMOS Process
3. Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications
4. ESD protection design for low trigger voltage and high latch-up immunity
5. A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-μm 5-V CMOS Process
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1. Novel dual-direction electrostatic discharge device with lateral PNP transistor;Acta Physica Sinica;2022
2. New DDSCR structure with high holding voltage for robust ESD applications*;Chinese Physics B;2021-03-01
3. Design of a novel high holding voltage LVTSCR with embedded clamping diode*;Chinese Physics B;2020-06-01
4. A modified low voltage triggered silicon controlled rectifier (SCR) for ESD applications;Semiconductor Science and Technology;2020-03-31
5. Influence of Silicon-Doping in n-AlGaN Layer on the Optical and Electrical Performance of Deep Ultraviolet Light-Emitting Diodes;Russian Journal of Physical Chemistry A;2019-12
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