A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/10/108503/pdf
Reference11 articles.
1. Challenges of electrostatic discharge (ESD) protection in silicon nanowire technology
2. Designing on-chip power supply coupling diodes for ESD protection and noise immunity
3. Novel clamp circuits for IC power supply protection
4. Mixed-voltage interface ESD protection circuits for advanced microprocessors in shallow trench and LOCOS isolation CMOS technologies
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Insight into multiple-triggering effect in DTSCRs for ESD protection;Journal of Semiconductors;2017-07
2. Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress;Chinese Physics B;2016-11-29
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