Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference23 articles.
1. Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
2. Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
3. HTCVD Grown Semi-Insulating SiC Substrates
4. SiC Crystal Growth by HTCVD
5. Silicon vacancy related defect in 4H and 6H SiC
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer;Chinese Physics Letters;2018-07
2. Dielectric properties of grain–grainboundary binary system;Physica B: Condensed Matter;2014-09
3. Spectra study of He-irradiation induced defects in 6H-SiC;Acta Physica Sinica;2014
4. Thermodynamic properties of 3C—SiC;Chinese Physics B;2013-10
5. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer;Acta Physica Sinica;2011
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