Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

Abstract

The excellent reverse breakdown characteristics of Schottky barrier varactor (SBV) are crucially required for the application of high power and high efficiency multipliers. The SBV with a novel Schottky structure named metal–brim is fabricated and systemically evaluated. Compared with normal structure, the reverse breakdown voltage of the new type SBV improves from –7.31 V to –8.75 V. The simulation of the Schottky metal–brim SBV is also proposed. Three factors, namely distribution of leakage current, the electric field, and the area of space charge region are mostly concerned to explain the physical mechanism. Schottky metal–brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at Schottky electrode edge.