The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/10/107303/pdf
Reference16 articles.
1. The 1.6-kV AlGaN/GaN HFETs
2. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
3. GaN-Based RF Power Devices and Amplifiers
4. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
5. Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
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1. Semiparametric evaluation of first‐passage distribution for step‐stress accelerated degradation tests;Applied Stochastic Models in Business and Industry;2024-04-25
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3. Lumen degradation modeling of white-light LEDs in step stress accelerated degradation test;Reliability Engineering & System Safety;2016-10
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