Author:
Wang Pengfei,Mi Minhan,Zhang Meng,Zhu Jiejie,Zhou Yuwei,Liu Jielong,Liu Sijia,Yang Ling,Hou Bin,Ma Xiaohua,Hao Yue
Abstract
We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-V
th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (V
th) values including the slant recess element and planar element in parallel along the gate width with N2O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (G
m) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7 V, which yields a flattened f
T/f
max-gate bias dependence. At the operating frequency of 30 GHz, the peak power-added efficiency (PAE) of 41% accompanied by the power density (P
out) of 5.3 W/mm. Furthermore, the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P
1 dB) of 28 dBm, whereas that of the Fin-like HEMT is 25.2 dBm. The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.
Subject
General Physics and Astronomy
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献