Strain induced electronic transition in 1T′ MoTe2: high pressure Raman, x-ray diffraction, resistivity measurements and first principles theoretical studies

Abstract

Abstract A detailed high pressure study is carried out on 1T′  MoTe2 using x-ray diffraction (XRD) and Raman spectroscopy measurements up to about 30.5 GPa along with a room temperature resistivity measurement up to 14.3(4) GPa and density functional theory calculations. Though high-pressure XRD measurements show no structural transition, all the lattice parameters exhibit anomalous changes in the pressure region 8.4 to 12.7 GPa. The compressibility of the sample is found to be reduced by almost four times above 12.7 GPa with respect to that below 8.4 GPa. The anomalies in the Raman mode corresponding to the out of plane vibrations of Mo atoms sitting in the unit cell surface indicate a strong electron–phonon coupling possibly mediated by differential strain inside the unit cell. A rapid decrease in resistivity value up to about 7.0(2) GPa of pressure agrees well with the increase in the density of states (DOS) at the Fermi energy with pressure. Pressure evolution of band structure, as well as DOS at the Fermi level, shows an enhancement of the metallic character of the sample. First principle calculations show increased stress in the x and y directions compared to the z-direction with the application of pressure.