Hafnium and zirconium nitrides with rock-salt and Th3P4 structures: electronic and phonon band structure calculations to examine hot carrier solar cell and thermoelectric properties
Author:
Publisher
IOP Publishing
Subject
Electrochemistry,Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/2516-1075/ab8d18/pdf
Reference60 articles.
1. Structure of reactively magnetron sputtered Hf‐N films
2. Zirconium nitride films prepared by cathodic arc plasma deposition process
3. Hafnium Nitride with Thorium Phosphide Structure: Physical Properties and an Assessment of the Hf-N, Zr-N, and Ti-N Phase Diagrams at High Pressures and Temperatures
4. Identification and thermodynamic mechanism of the phase transition in hafnium nitride films
5. Synthesis of cubic zirconium and hafnium nitride having Th3P4 structure
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1. Research Trends of Atomic Layer Deposition of Metal Nitrides and Their Applications in Semiconductor Industry;Ceramist;2024-03-31
2. Synthesis and Characterisation of Hafnium Oxynitride Thin Film: Can It Be Used as a Hot Carrier Solar Cell Material?;2021 IEEE 48th Photovoltaic Specialists Conference (PVSC);2021-06-20
3. Nanostructured metal nitrides for photocatalysts;Journal of Materials Chemistry C;2021
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