Strain-engineered robust and Schottky-barrier-free contact in 2D metal–semiconductor heterostructure
Author:
Funder
Fundamental Research Funds of the Central Universities
Science Challenge Project
Thousand Youth Talents Program of China
National Natural Science Foundation of China
Publisher
IOP Publishing
Link
https://iopscience.iop.org/article/10.1088/2516-1075/aaf0b3/pdf
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