Abstract
Abstract
Artificial intelligence (AI) technologies are accelerating the rapid innovations of multifunctional micro/nanosystems for boosting significant applications in flexible electronics, human healthcare, advanced robotics, autonomous control, and human–machine interfaces. III-nitride semiconductors, e.g. GaN, AlN, InN, and their alloys, exhibit superior device characteristics in high-performance opto-/electronics, due to the unique polarization effects in the non-central-symmetric crystal. Piezotronics, coupled with piezoelectric polarization and semiconductor properties, can provide a novel approach for controlling charge carrier transport across the interfacial Schottky barrier or p–n junction in these piezoelectric semiconductors. It means constructing a direct, real-time, seamless interaction between human/machine and environment, which indicates great potential in emerging AI systems. In this article, we review the research progress of piezotronics on III-nitride semiconductors, summarize the fundamental theory of piezotronics, illustrate flexible device process, present emerging piezotronic intelligent GaN-based devices, and provide innovative supports for building adaptive and interactive AI systems.
Funder
National Key Research and Development Program of China
Natural Science Foundation of Beijing Municipality
National Natural Science Foundation of China
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
4 articles.
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