Ion dynamics in capacitively coupled argon–xenon discharges

Author:

Klich MORCID,Wilczek SORCID,Janssen J F J,Brinkmann R PORCID,Mussenbrock TORCID,Trieschmann JORCID

Abstract

Abstract An argon–xenon (Ar/Xe) plasma is used as a model system for complex plasmas. Based on this system, symmetric low-pressure capacitively coupled radiofrequency discharges are examined utilizing particle-in-cell/Monte Carlo collisions simulations. In addition to the simulation, an analytical energy balance model fed with the simulation data is applied to analyze the findings further. This work focuses on investigating the ion dynamics in a plasma with two ion species and a gas mixture as background. By varying the gas composition and driving voltage of the single-frequency discharge, fundamental mechanics of the discharge, such as the evolution of the plasma density and the energy dispersion, are discussed. Thereby, close attention is paid to these measures’ influence on the ion energy distribution functions at the electrode surfaces. The results show that both the gas composition and the driving voltage can significantly impact the ion dynamics. The mixing ratio of argon to xenon allows for shifting the distribution function for one ion species from collisionless to collision dominated. The mixing ratio serves as a control parameter for the ion flux and the impingement energy of ions at the surfaces. Additionally, a synergy effect between the ionization of argon and the ionization of xenon is found and discussed.

Funder

Deutsche Forschungsgemeinschaft

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3