Beam-generated plasma formation near a dielectric target irradiated by a pulsed electron beam in the forevacuum pressure range

Author:

Kazakov A VORCID,Oks E MORCID,Panchenko N AORCID,Yushkov Yu GORCID,Zolotukhin D BORCID

Abstract

Abstract We have investigated the formation of electron beam-generated (EBG) plasma near a dielectric (ceramic) target and an insulated metal target, and the compensation of the negative charge accumulated on the insulated metal target when the targets are irradiated by an intense pulsed electron beam in the forevacuum pressure range (4–15 Pa). It is shown that the density of the EBG plasma near the irradiated ceramic target (or the irradiated insulated metal target) is greater than the plasma density for a beam propagating freely in a vacuum chamber (or for the grounded metal target). The EBG plasma near the target is formed with a certain delay with respect to the electron beam current pulse, because of which the negative potential of the insulated target is also compensated by a delay. The delay time in the formation of the EBG plasma and in the compensation of the target negative potential decreases with increasing gas pressure. Expressions have been proposed for estimating this delay time.

Funder

Ministry of Science and Higher Education of the Russian Federation, Grant

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference31 articles.

1. Foundations of plasmas for medical applications;von Woedtke;Plasma Sources Sci. Technol.,2022

2. Schmidt plasma generation and plasma sources;Conrads;Plasma Sources Sci. Technol.,2000

3. An atmospheric pressure plasma source;Park;Appl. Phys. Lett.,2000

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3