Absolute atomic nitrogen density spatial mapping in three MHCD configurations

Author:

Remigy AliceORCID,Menacer Belkacem,Kourtzanidis KonstantinosORCID,Gazeli OdhiseaORCID,Gazeli KristaqORCID,Lombardi GuillaumeORCID,Lazzaroni ClaudiaORCID

Abstract

Abstract In this work, nanosecond two-photon absorption laser induced fluorescence (TALIF) is used to perform spatial mappings of the absolute density of nitrogen atoms generated in a micro-hollow cathode discharge (MHCD). The MHCD is operated in the normal regime, with a DC discharge current of 1.6 mA and the plasma is ignited in a 20% Ar/ 80% N2 gas mixture. A 1-inch diameter aluminum substrate, acting as a third electrode (second anode), is placed further away from the MHCD to emulate a deposition substrate. The spatial profile of the N atoms is measured in three MHCD configurations. First, we study a MHCD having the same pressure (50 mbar) on both sides of the anode/cathode electrodes and the N atoms simply diffuse in three dimensions from the MHCD. The recorded N atoms density profile in this case satisfies our expectations, i.e. the maximal density is found at the axis of the hole, close to the MHCD. However, when we introduce a pressure differential, thus creating a plasma jet, an unexpected N atoms distribution is measured with maximum densities away from the jet axis. This behavior cannot be simply explained by the TALIF measurements. Then, as a first simplified approach in this work, we turn our attention to the role of the gas flow pattern. Compressible gas flow simulations show a correlation between the jet width and the radial distribution of the N atoms at different axial distances from the gap. Finally, a DC positive voltage is applied to the third electrode (second anode), which ignites a micro cathode sustained discharge (MCSD). The presence of the pressure differential unveils two stable working regimes depending on the current repartition between the two anodes. The MCSD enables an homogenization of the density profile along the surface of the substrate, which is suitable for nitride deposition applications.

Funder

Agence Nationale de la Recherche

Publisher

IOP Publishing

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