Abstract
Abstract
A flexible magnetic detector based on ferroelectric/ferromagnetic (PZT/Metglas) thin film heterostructure is developed by using etching and transferring technique. The transferred PZT film still exhibits (001)-oriented or very highly textured structure with good ferroelectricity (P
r = 50 μC cm−2 and E
c = 150 kV cm−1). Magnetoelectric (ME) voltage coefficient of the PZT/Metglas film heterostructure approaches 5.1 V cm−1 Oe at resonance frequency (57.5 kHz). The flexible detector has a sensitivity of AC 0.3 nT and DC 1 Oe with high stability for magnetic field detection. Our demonstration provides a viable approach for realizing ME thin film transfer technology, which is of great significance for future applications on flexible magnetic detectors.
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics,Civil and Structural Engineering,Signal Processing