Abstract
Abstract
Theoretical treatment of resonant hyper-Raman scattering of light by LO phonons in wurtzite semiconductors is given. The hyper-Raman process was considered for the scattering geometry y(xxz)x at which it involves the two-photon transitions to the B and C excitons of the s-type. Allowance was made for different sequences of intermediate virtual states. On the example of a CdS crystal the influence of the possible dipole transitions to the deeper valence band on the frequency dependence of the scattering cross section was investigated.
Subject
Industrial and Manufacturing Engineering,Condensed Matter Physics,Instrumentation,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献