A study of electron binding at the isoelectronic nitrogen centre in GaP and InGaP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/7/i=12/a=002/pdf
Reference9 articles.
1. Isoelectronic impurities in semiconductors: a survey of binding mechanisms
2. Binding to Isoelectronic Impurities in Semiconductors
3. Recombination processes associated with “Deep states” in gallium phosphide
4. Toward a Theory of Isoelectronic Impurities in Semiconductors
5. Calculations of impurity states in semiconductors: I
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theory of the exciton molecule bound to an isoelectronic impurity in GaP;Physical Review B;1986-02-15
2. Electronic states associated with the substitutional nitrogen impurity in GaPxAs1-x;Journal of Physics C: Solid State Physics;1979-02-14
3. The electronic structure of impurities and other point defects in semiconductors;Reviews of Modern Physics;1978-10-01
4. III–V compound semiconductors;Topics in Applied Physics;1977
5. Electroluminescence in semiconductors;Journal of Luminescence;1976-03
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