A radiation damage centre in gallium phosphide containing boron (Local mode absorption)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/5/i=6/a=002/pdf
Reference8 articles.
1. Electron irradiation damage in silicon containing high concentrations of boron
2. Infra-red absorption of gallium phosphide containing boron
3. Raman Scattering from Localized Vibrational Modes in GaP
4. Infrared Lattice Absorption of GaP
5. Irradiation damage in carbon-doped silicon irradiated at low temperatures by 2 MeV electrons
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Clustering process of interstitial atoms in gallium phosphide studied by transmission electron microscopy;Physical Review B;1996-08-15
2. Optical characterization of a deep (Cu-C)-related complex defect in GaP;Physical Review B;1989-02-15
3. Irradiation Induced Defects in III–V Semiconductor Compounds;Physica Status Solidi (a);1987-08-16
4. The selective trapping of mobile group-V interstitials by impurities in electron-irradiated GaAs and GaP;Journal of Physics C: Solid State Physics;1984-03-20
5. Radiation-induced interstitial boron defects in gallium phosphide and gallium arsenide;Journal of Physics C: Solid State Physics;1981-04-20
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