Phonon attenuation in heavily doped many-valley semiconductors. II. The effect of mass anisotropy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=22/a=012/pdf
Reference14 articles.
1. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium
2. Electron-Hole Liquids in Semiconductors
3. Phonon spectroscopy of the electron-hole liquid in germanium
4. Spin-Lattice Relaxation of Shallow Donor States in Ge and Si through a Direct Phonon Process
5. Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
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2. A model for the high‐temperature transport properties of heavily dopedn‐type silicon‐germanium alloys;Journal of Applied Physics;1991-01
3. Acoustic properties of heavily doped many-valley semiconductors in the weak-localization regime;Physical Review B;1986-06-15
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