Self-consistent calculations of electron and hole sub-band energies for an n-p superlattice in GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=31/a=024/pdf
Reference17 articles.
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5. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
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1. Electron–hole superlattices in GaAs/AlxGa1−xAs multiple quantum wells;Philosophical Magazine;2006-08-11
2. Application of an efficient algorithm for solving the one-band effective mass equation self-consistently in the modelling of some low-dimensional structure devices;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;1992-02
3. Electronic structure of short-periodn-pGaAs doping superlattices;Physical Review B;1991-03-15
4. Dependence of lifetime on design parameters of an nipi doping superlattice: Results of self-consistent calculations;Superlattices and Microstructures;1988-01
5. Calculations of bound states in the valence band of AlAs/GaAs/AlAs and AlGaAs/GaAs/AlGaAs quantum wells;Semiconductor Science and Technology;1987-09-01
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