Mode Gruneisen parameters and stress-induced changes in the infrared spectrum of silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/8/i=8/a=017/pdf
Reference14 articles.
1. Effect of static uniaxial stress on the Raman spectrum of silicon
2. Spectral intensities of two-phonon transititions in stressed zinc-blende lattices
3. The thermodynamic and optical properties of germanium, silicon, diamond and gallium arsenide
4. Anharmonic interactions in diamond-type crystals
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Measurement of Phonon Energies in Silicon under Uniaxial Stress;physica status solidi (b);1984-11-01
2. Calculation of Grüneisen Constants in Si;physica status solidi (b);1984-11-01
3. Observation of two-phonon difference bands in the FIR transmission spectrum of Si;Infrared Physics;1984-05
4. Inelastic light scattering in the presence of uniaxial stresses;Journal of Raman Spectroscopy;1981-01
5. Morphic Effects in Lattice Dynamics;Dynamical Properties of Solids;1980
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