Point defect calculations in diamond-type crystals by the extended Huckel method 1: General theory and the vacancy problem
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/4/i=18/a=012/pdf
Reference43 articles.
1. Extended Hückel Theory and the Shape of Molecules
2. New Method for Treating Lattice Point Defects in Covalent Crystals
3. Basis of extended H�ckel formalism
4. Localized Defects in Semiconductors
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