Optically induced avalanche in InSb
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=9/a=014/pdf
Reference29 articles.
1. Impact Ionisation and Quantum Efficiency in InSb
2. The Influence of the L-Conduction Band on the Internal Quantum Efficiency of InSb
3. Lifetime of Charge Carriers in Intrinsic Indium Antimonide
4. Threshold energy for electron-hole pair production in a semiconductor
5. Time‐resolved pump depletion inn‐InSb Raman spin‐flip laser
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Observation of Structural Anisotropy and the Onset of Liquidlike Motion During the Nonthermal Melting of InSb;Physical Review Letters;2005-09-12
2. Chapter 5 One-and Two-Photon Magneto-Optical Spectroscopy of InSb and Hg1–xCdxTe;Semiconductors and Semimetals;1992
3. Absorption saturation of heavy- to light-hole band transitions inp-type InSb;Physical Review B;1988-11-15
4. Solid-state analogue of the relativistic gases;Physical Review B;1986-06-15
5. Optically created hole multiplication in InSb;Journal of Physics C: Solid State Physics;1983-08-10
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