The mechanism of radiation-enhanced diffusion of oxygen in silicon at room temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/17/i=32/a=006/pdf
Reference26 articles.
1. Electron irradiation damage in silicon containing carbon and oxygen
2. Impurity dependence of the low temperature annealing inn-type germanium
3. Electron localization by density fluctuations
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