Absorption and luminescence transitions involving excited hole states of excitons bound to lithium donors in silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/12/i=12/a=007/pdf
Reference17 articles.
1. Excitation Spectra of Lithium Donors in Silicon and Germanium
2. The use of the Weierstrass sphere geometry in luminescence spectroscopy
3. Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon
4. Bound-exciton absorption in Si:Al, Si:Ga, and Si:In
5. Absorption due to the creation of bound excitons in phosphorus-doped silicon
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors;Physical Review B;2007-02-09
2. Lithium and lithium-carbon isoelectronic complexes in silicon: Luminescence-decay-time, absorption, isotope-splitting, and Zeeman measurements;Physical Review B;1984-04-15
3. Radiative recombination of excitons bound to beryllium double acceptors in germanium;Journal of Physics C: Solid State Physics;1984-03-20
4. Theory of fine-structure splittings for donor-bound excitons in indirect materials;Physical Review B;1982-03-15
5. Evidence for an excited hole state of donor bound excitons in germanium and a parity selection rule;Journal of Physics C: Solid State Physics;1980-09-30
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