Electron-hole liquid in heavily doped n-type ge and si
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/8/i=9/a=009/pdf
Reference16 articles.
1. Semiconductor-to-Metal Transition inn-Type Group IV Semiconductors
2. Infrared Absorption in Heavily Doped n-Type Si
3. Positron Correlation Energy in Metals
4. Electron-hole liquid in many-band systems. II. Ge and Si
5. Electron-Hole Liquids in Semiconductors
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1. Room temperature electron–hole liquid phase in monolayer MoSi2Z4 (Z = pinctogen);2D Materials;2023-07-28
2. Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium I. Photoluminescence Studies on Recombination Dynamics;Journal of the Physical Society of Japan;1987-12-15
3. Theory of Electron–Hole Liquid in Doped Semiconductors. Application to GaP;physica status solidi (b);1983-07-01
4. Band-gap narrowing in heavily doped many-valley semiconductors;Physical Review B;1981-08-15
5. Surface structure of electron-hole drops in germanium and silicon;Physical Review B;1978-03-15
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