Quantisation of electron states in a two-dimensional GaAs impurity band at low carrier concentrations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/13/i=35/a=007/pdf
Reference5 articles.
1. Effect of coexistence of random potential and electron-electron interaction in two-dimensional systems: Wigner glass
2. Ultrathin doping layers as a model for 2D systems
3. Conductance oscillations in a two-dimensional impurity band
4. Two-dimensional subbanding in junction field effect structures
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1. Variational Calculation of Ground Subband Energy of a Two-Dimensional Electron Gas in p-n+ -p Structure;physica status solidi (b);1984-04-01
2. New experimental results for electron transport in weak accumulation layers of ZnO crystals;Surface Science;1984-02
3. Mobility of two-dimensional electron gas in JFETS limited by polar-optic and impurity scattering;Solid State Communications;1983-12
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5. Acoustic and piezoelectric scattering of two-dimensional electron gas in junction FET structures;Journal of Physics C: Solid State Physics;1982-09-30
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