Electrical resistivity and Hall effect in TiSe2containing vanadium impurities
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/12/i=18/a=017/pdf
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5. Transport properties and the phase transition inTi1−xMxSe2 (M=TaorV)
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3. Tunable Se vacancy defects and the unconventional charge density wave in1T−TiSe2−δ;Physical Review B;2017-01-31
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