Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/12/i=18/a=029/pdf
Reference14 articles.
1. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing
2. Laser‐Induced Infrared Absorption in Silicon
3. Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 μm
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