A study of the electronic wavefunction associated with isolated nitrogen impurities in GaP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/14/i=17/a=006/pdf
Reference11 articles.
1. Excited states of excitons bound to nitrogen pairs in GaP
2. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
3. Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTe
4. Recombination processes associated with “Deep states” in gallium phosphide
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1. NN2trap in GaP: A reexamination;Physical Review B;1987-05-15
2. Model for phonon-assisted indirect recombination at impurity sites in semiconductors: A test of impurity wave-function theories;Physical Review B;1985-08-15
3. A Variational Method in Wannier Representation for an Electron Weakly Bound to an Isoelectronic Impurity;physica status solidi (b);1985-04-01
4. The Influence of Correlation and Band Structure Effects on an Exciton Weakly Bound to an Isoelectronic Impurity;physica status solidi (b);1985-03-01
5. New electron states of negative ions in semiconductors;Solid State Communications;1984-08
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