Secondary emission due to recombination of excitons near indirect band bottom. II. Experimental and theoretical analysis in BiI3
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/18/i=20/a=028/pdf
Reference16 articles.
1. Secondary emission due to recombination of excitons near indirect band bottom. I. General feature
2. Optical Properties of Bismuth Tri-Iodide Single Crystals. II. Intrinsic Absorption Edge
3. Optical properties of BiI3 single crystals
4. Zone-folding effects on phonons and excitons in polytypic BiI3 single crystals
5. Resonant Raman Scattering and Hot Luminescence at the Indirect Exciton in BiI3
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1. Raman scattering, luminescence, and absorption edge under hydrostatic pressures of layered BiI3 and SbI3;Journal of Raman Spectroscopy;2007
2. Theoretical Study of the Local Lattice Distortion at the Trigonal Cr3+ Center in BiI3;Zeitschrift für Naturforschung A;2006-02-01
3. Raman Scattering under Hydrostatic Pressures in Layered BiI3 and SbI3 Crystals;physica status solidi (b);2001-08
4. Spatial propagation of high-density excitons localized at a stacking disorder plane inBiI3;Physical Review B;1998-11-15
5. Optical properties of nanostructures in layered metal tri-iodide crystals;Journal of Luminescence;1996-10
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