Tunneling and magneto-tunnelling effects in n+GaAs/(AlGa)As/n-GaAs/n+GaAs devices-Reference-Cited by-同舟云学术

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Tunneling and magneto-tunnelling effects in n+GaAs/(AlGa)As/n-GaAs/n+GaAs devices

Published:1985-07-20 Issue:20 Volume:18 Page:L605-L609
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

Guimaraes P S S,Taylor D C,Snell B R,Eaves L,Singer K E,Hill G,Pate M A,Toombs G A,Sheard F W

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/18/i=20/a=007/pdf

Reference10 articles.

1. Electron-Phonon Interactions in InSb Junctions

2. Phonon-Assisted Tunneling in Silicon and Germanium Esaki Junctions

3. A new device using the tunneling process in narrow p-n junctions

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Čerenkov phonon radiation and phonon structure in electron emission, electroluminescence, and current–voltage characteristics of electroformed Al–Al2O3–Ag diodes;Journal of Applied Physics;2020-04-30

2. Electron tunneling through single-barrier heterostructures in a magnetic field;Physical Review B;1994-08-15

3. Investigation of LO phonon emission by hot holes and the effective mass for hole tunnelling in GaAs/(AlGa)As single barrier structures;Semiconductor Science and Technology;1992-03-01

4. Hot hole effects in single barrierp‐type GaAs/(AlGa)As/GaAs tunnel structures;Applied Physics Letters;1991-12-09

5. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields;Physics of Quantum Electron Devices;1990

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