Aluminium overlayers on (110) indium phosphide: microscopic aspects of interface formation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/15/i=34/a=017/pdf
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1. Chemisorption of aluminium on GaAs(110);Journal of Physics: Condensed Matter;1993-12-06
2. Investigation of Schottky barrier formation for transition metal overlayers on InP and GaP(110) surfaces;Surface Science;1992-05
3. Chapter 11 Thin Films on Semiconductors;Angle-Resolved Photoemission - Theory and Current Applications;1992
4. Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy;Surface Science Reports;1989-11
5. An investigation of metal contacts to II–VI compounds: CdTe and CdS;Vacuum;1988-01
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