Efficient force computation method in tight-binding model
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/15/i=23/a=001/pdf
Reference10 articles.
1. Electronic states associated with the 60° edge dislocation in silicon
2. Dislocation states in gallium arsenide
3. Calculation of core structure and core energy of 1/2⟨111⟩{110} and 1/2⟨111⟩{112} edge dislocations in a b.c.c. transition metal: moments approach
4. Electronic theory for screw dislocation in b.c.c. transition metals
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The tight-binding bond model;Journal of Physics C: Solid State Physics;1988-01-10
2. Solute-atom-dislocation force using modified tight-binding recursion method;Journal of Physics F: Metal Physics;1987-01
3. Influence of noncentral forces on lattice stability and defect formation;Journal of Physics F: Metal Physics;1987-01
4. Modified recursion method for an efficient force computation in transition metals;Journal of Physics F: Metal Physics;1987-01
5. Structure du coeur des dislocations vis 1/3⟨1120⟩ dans le titane;Philosophical Magazine A;1985-07
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