Conductance oscillations and source-drain-limited conduction in Si MOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/12/i=23/a=005/pdf
Reference6 articles.
1. Fine structure in the field effect mobility of MOS transistors
2. Low temperature effects in Si FETs
3. The Anderson transition in silicon inversion layers: the origin of the random field and the effect of substrate bias
4. The radiation hardness of the Si-SiO2interface and carrier localisation in the inversion layer
5. Conductance oscillations in a two-dimensional impurity band
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