Defect states dominated by localised potentials in semiconductors-Reference-Cited by-同舟云学术

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Defect states dominated by localised potentials in semiconductors

Published:1981-03-30 Issue:9 Volume:14 Page:1243-1253
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

Brand S,Jaros M,Rodriguez C O

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/14/i=9/a=011/pdf

Reference13 articles.

1. Silicon Vacancy: A Possible "Anderson Negative-U" System

2. Simple parametrized model for Jahn-Teller systems: Vacancy inp-type silicon

3. New self-consistent approach to the electronic structure of localized defects in solids

4. Band Structure and Impurity States

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Screening and delocalization effects in Schottky barrier formation;Perspectives in Condensed Matter Physics;1990

2. Delocalization Effects at Metal-Semiconductor Interfaces;Physical Review Letters;1988-08-01

3. Screening and delocalization effects in Schottky barrier formation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-07

4. Supercell calculation on the ideal silicon single vacancy;Solid State Communications;1986-02

5. Chapter 4 Models for Mid-Gap Centers in Gallium Arsenide;Semiconductors and Semimetals;1984

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