Deep impurities in semiconductors. I. Evanescent states and complex band structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/13/i=3/a=012/pdf
Reference19 articles.
1. Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent Calculation
2. Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs
3. Photoionisation of deep impurity levels in semiconductors
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