The applicability of simple band models for the description of a pseudo-IV-VI semiconductor: TlBiTe2
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/18/i=25/a=012/pdf
Reference23 articles.
1. Energy Bands in the Bismuth Structure. I. A Nonellipsoidal Model for Electrons in Bi
2. Electric-Susceptibility Hole Mass of Lead Telluride
3. Superconductivity in TlBiTe2: A Low Carrier Density (III-V)VI2Compound
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Single-Dirac-Cone Topological Surface States in theTlBiSe2Class of Topological Semiconductors;Physical Review Letters;2010-07-16
2. Large single-crystal growth and characterization of the narrow-gap semiconductor;Semiconductor Science and Technology;1996-10-01
3. Growth, Electrical, and Optical Properties of TlBiSe2 Single Crystals;Physica Status Solidi (a);1993-04-16
4. Energy spectrum of rhombohedral III-V-VI2compounds: ternary isoelectronic analogues of bismuth-type semimetals;Journal of Physics: Condensed Matter;1990-02-05
5. Energy gap dependence on temperature in TlBiTe2 crystals;Journal of Materials Science Letters;1987-12
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